The VLSI and MEMS Test Facility meets the demanding test requirements of complex, high speed and high pincount  Integrated Circuits in digital, analog and mixed signal  domains. The facility also caters to testing of a variety of MEMS devices such as Pressure Sensors, Temperature Sensors and Accelerometers.

Test plan and engineering activities are implemented at various stages of product development, viz.:
 

	Prototype testing/Debug at wafer and device level
	Device characterization
	Volume testing by Test program development on ATE.

VLSI TESTING
 

The Mixed Signal VLSI Tester is one of the latest test platforms with capabilities to characterize analog, digital and mixed signal devices with upto 256 digital pins (400 MHz clock rate) and analog operation. The test resources  include

	20 DC channels having ±30V@200mA
	4 DC channels having +75V@200mA
	256 Digital channels @ 400 MHz clock/data rate un-compromised.
	Analog Instrumentation ( DC to 150MHz )
Devices can be characterized in the temperature range of –55°C to 125°C using precision Temperature test equipment.

MEMS TESTING

The following MEMS devices are tested :
	Pressure Sensors
	- upto 250 bar for packaged devices
	Temperature Sensors from -20°C to  150°C
	Accelerometers upto 20g.